![]() This device is highly scalable due to its sub-lithographic channel length non-implanted ultra-shallow source and drain extensions non-epi raised source and drain regions and gate-last flow. FlexFET įlexFET is a planar, independently double-gated transistor with a damascene metal top gate MOSFET and an implanted JFET bottom gate that are self-aligned in a gate trench. The primary challenge in fabricating such structures is achieving satisfactory self-alignment between the upper and lower gates. In planar double-gate transistors the drain–source channel is sandwiched between two independently fabricated gate/gate-oxide stacks. Planar double-gate MOSFET (DGMOS) Ī planar double-gate MOSFET (DGMOS) employs conventional planar (layer-by-layer) manufacturing processes to create double-gate MOSFET (metal–oxide–semiconductor field-effect transistor) devices, avoiding more stringent lithography requirements associated with non-planar, vertical transistor structures. non-planar design) and the number of channels/gates (2, 3, or 4). ![]() In general, these variants may be differentiated and classified in terms of architecture (planar vs. Types Several multigate modelsĭozens of multigate transistor variants may be found in the literature. They are available from manufacturers such as Motorola, NXP Semiconductors, and Hitachi. Other complementary strategies for device scaling include channel strain engineering, silicon-on-insulator-based technologies, and high-κ/metal gate materials.ĭual-gate MOSFETs are commonly used in very high frequency (VHF) mixers and in sensitive VHF front-end amplifiers. The primary roadblock to widespread implementation is manufacturability, as both planar and non-planar designs present significant challenges, especially with respect to lithography and patterning. Development efforts into multigate transistors have been reported by the Electrotechnical Laboratory, Toshiba, Grenoble INP, Hitachi, IBM, TSMC, UC Berkeley, Infineon Technologies, Intel, AMD, Samsung Electronics, KAIST, Freescale Semiconductor, and others, and the ITRS predicted correctly that such devices will be the cornerstone of sub-32 nm technologies. Multi-gate transistors are one of the several strategies being developed by MOS semiconductor manufacturers to create ever-smaller microprocessors and memory cells, colloquially referred to as extending Moore's law (in its narrow, specific version concerning density scaling, exclusive of its careless historical conflation with Dennard scaling). The most widely used multi-gate devices are the FinFET (fin field-effect transistor) and the GAAFET (gate-all-around field-effect transistor), which are non-planar transistors, or 3D transistors. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor ( MIGFET). The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. ![]() A multigate device, multi-gate MOSFET or multi-gate field-effect transistor ( MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. ![]()
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